Multi-domain ferroelectricity as a limiting factor for voltage amplification in ferroelectric field-effect transistors

摘要

We revise the possibility of having an amplified surface potential inferroelectric field-effect transistors pointed out by [S. Salahuddin and S.Datta, Nano Lett. 8, 405 (2008)]. We show that the negative-capacitance regimethat allows for such an amplification is actually bounded by the appearance ofmulti-domain ferroelectricity. This imposes a severe limit to the maximumstep-up of the surface potential obtainable in the device. We indicate newdevice design rules taking into account this scenario.